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TIP35C データシート(PDF) 2 Page - ON Semiconductor

部品番号 TIP35C
部品情報  Complementary Silicon High?뭁ower Transistors
PDF  6 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

TIP35C データシート(HTML) 2 Page - ON Semiconductor

  TIP35C Datasheet HTML 1Page - ON Semiconductor TIP35C Datasheet HTML 2Page - ON Semiconductor TIP35C Datasheet HTML 3Page - ON Semiconductor TIP35C Datasheet HTML 4Page - ON Semiconductor TIP35C Datasheet HTML 5Page - ON Semiconductor TIP35C Datasheet HTML 6Page - ON Semiconductor  
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TIP35A, TIP35B, TIP35C (NPN); TIP36A, TIP36B, TIP36C (PNP)
http://onsemi.com
2
ORDERING INFORMATION
Device
Package
Shipping
TIP35A
SOT−93 (TO−218)
30 Units / Rail
TIP35AG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP35B
SOT−93 (TO−218)
30 Units / Rail
TIP35BG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP35C
SOT−93 (TO−218)
30 Units / Rail
TIP35CG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36A
SOT−93 (TO−218)
30 Units / Rail
TIP36AG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36B
SOT−93 (TO−218)
30 Units / Rail
TIP36BG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
TIP36C
SOT−93 (TO−218)
30 Units / Rail
TIP36CG
SOT−93 (TO−218)
(Pb−Free)
30 Units / Rail
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mA, IB = 0)
TIP35A, TIP36A
TIP35B, TIP36B
TIP35C, TIP36C
VCEO(sus)
60
80
100
−
−
−
Vdc
Collector−Emitter Cutoff Current
(VCE = 30 V, IB = 0)
TIP35A, TIP36A
(VCE = 60 V, IB = 0)
TIP35B, TIP35C, TIP36B, TIP36C
ICEO
−
−
1.0
1.0
mA
Collector−Emitter Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES
−
0.7
mA
Emitter−Base Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO
−
1.0
mA
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 1.5 A, VCE = 4.0 V)
(IC = 15 A, VCE = 4.0 V)
hFE
25
15
−
75
−
Collector−Emitter Saturation Voltage
(IC = 15 A, IB = 1.5 A)
(IC = 25 A, IB = 5.0 A)
VCE(sat)
−
−
1.8
4.0
Vdc
Base−Emitter On Voltage
(IC = 15 A, VCE = 4.0 V)
(IC = 25 A, VCE = 4.0 V)
VBE(on)
−
−
2.0
4.0
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 1.0 A, VCE = 10 V, f = 1.0 kHz)
hfe
25
−
−
Current−Gain — Bandwidth Product
(IC = 1.0 A, VCE = 10 V, f = 1.0 MHz)
fT
3.0
−
MHz
2. Pulse Test: Pulse Width = 300
ms, Duty Cycle v 2.0%.



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