2SD2012 datasheet(1/4 Pages) MCC

部品番号	2SD2012

部品情報	NPN Silicon Power Transistors

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メーカー	MCC [Micro Commercial Components]

ホームページ	http://www.mccsemi.com

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2SD2012

NPN Silicon

Power Transistors

Features

•

High DC Current Gain: hFE(1) =100 (Min.)

•

Low Saturation Voltage: VCE(sat)=1.0V (Max.)

•

High Power Dissipation: PC=25W (TC=25

OC)

Maximum Ratings

Symbol

Rating

Unit

VCEO

Collector-Emitter Voltage

60

V

VCBO

Collector-Base Voltage

60

V

VEBO

Emitter-Base Voltage

7.0

V

IC

Collector Current

3.0

A

IB

Base Current

0.5

A

PC

Collector power dissipation

TA=25

OC

TC=25

OC

2.0

25

W

TJ

Junction Temperature

-55 to +150

OC

TSTG

Storage Temperature

-55 to +150

OC

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

V(BR)CEO

Collector-Emitter Breakdown Voltage

(IC=50mAdc, IB=0)

60

---

Vdc

ICBO

Collector-Base Cutoff Current

(VCB=60Vdc,IE=0)

---

100

uAdc

IEBO

Emitter-Base Cutoff Current

(VEB=7.0Vdc, IC=0)

---

100

uAdc

ON CHARACTERISTICS

hFE(1)

Forward Current Transfer ratio

(IC=0.5Adc, VCE=5.0Vdc)

100

---

320

---

hFE(2)

Forward Current Transfer ratio

(IC=2.0Adc, VCE=5.0Vdc)

20

---

VCE(sat)

Collector-Emitter Saturation Voltage

(IC=2.0Adc, IB=0.2Adc)

---

0.4

1.0

Vdc

VBE

Base-Emitter Saturation Voltage

(IC=0.5Adc, VCE=5.0Vdc)

---

0.75

1.0

Vdc

fT

Transition Frequency

(VCE=5.0Vdc, IC=0.5Adc)

---

3.0

---

MHz

Cob

Collector Output Capacitance

(VCB=10Vdc, IE=0, f=1.0MHz)

---

35

---

pF

omponents

20736 Marilla Street Chatsworth

!"#

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MCC

Revision: A

2011/01/01

Micro Commercial Components

www.mccsemi.com

1 of 4

Notes: 1. High Temperature Solder Exemption Applied, see EU Directive Annex 7.

•

Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates

RoHS Compliant. See ordering information)

•

Epoxy meets UL 94 V-0 flammability rating

•

Moisure Sensitivity Level 1

TO-220

R

B

Q

H

U

L

D

C

J

K

A

F

S

T

1

3

2

N

V

MIN

MAX

NOTE

A

.560

.625

14.22

15.88

B

.380

.420

9.65

10.67

C

.140

.190

3.56

4.82

D

.020

.045

0.51

1.14

F

.139

.161

3.53

4.09

∅

G

.190

.110

2.29

2.79

H

---

.250

---

6.35

J

.012

.025

0.30

0.64

K

.500

.580

12.70

14.73

L

.045

.060

1.14

1.52

N

.190

.210

4.83

5.33

Q

.100

.135

2.54

3.43

R

.080

.115

2.04

2.92

S

.045

.055

1.14

1.39

T

.230

.270

5.84

6.86

U

-----

.050

-----

1.27

V

.045

-----

1.15

-----

DIMENSIONS

INCHES

MM

DIM

MIN

MAX

PIN 1.

BASE

PIN 2.

COLLECTOR

PIN 3.

EMITTER

同様の部品番号 - 2SD2012

メーカー	部品番号	データシート	部品情報
Toshiba Semiconductor	2SD2012	165Kb / 3P	NPN TRIPLE DIFFUSED TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS)
STMicroelectronics	2SD2012	228Kb / 5P	NPN SILICON POWER TRANSISTOR
STMicroelectronics	2SD2012	127Kb / 5P	NPN SILICON POWER TRANSISTOR Oct-2003
Toshiba Semiconductor	2SD2012	131Kb / 5P	Silicon NPN Triple Diffused Type
Toshiba Semiconductor	2SD2012	133Kb / 5P	Audio Frequency Power Amplifier Applications

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