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MP6T13 データシート(PDF) 1 Page - Rohm |
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MP6T13 データシート(HTML) 1 Page - Rohm |
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1 / 6 page ![]() www.rohm.com ©20 10 ROHM Co., Ltd. All rights reserved. Midium Power Transistors (-50V / -3A) MP6T13 Structure Dimensions (Unit : mm) PNP Silicon epitaxial planar transistor Features 1) Low saturation voltage VCE (sat) = -0.4V (Max.) (IC / IB= -1A / -50mA) 2) High speed switching Applications Inner circuit (Unit : mm) Package MPT6 Code TR Basic ordering unit (pieces) 1000 Absolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr.1 and Tr.2> Symbol Limits Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -6 V DC IC -3 A Pulsed ICP -6 A PD 2.0 W/Total PD 1.4 W/Element Junction temperature Tj 150 C Range of storage temperature Tstg -55 to 150 C *1 Pw=10ms, Single Pulse *2 Mounted on a 40 x 40 x 0.7[mm] ceramic board Low Frequency Amplifier Driver Packaging specifications Type Parameter Collector current Power dissipation *1 *2 *2 (1) Tr.1 Emitter (2) Tr.1 Base (3) Tr.2 Collector (4) Tr.2 Emitter (5) Tr.2 Base (6) Tr.1 Collector (1) Tr.1 Emitter (2) Tr.1 Base (3) Tr.2 Collector (4) Tr.2 Emitter (5) Tr.2 Base (6) Tr.1 Collector (1) (2) (3) (4) (5) (6) Tr.1 Tr.2 MPT6 (Dual) (1) (2) (3) (6) (5) (4) 1/5 2010.12 - Rev.A |
同様の部品番号 - MP6T13 |
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同様の説明 - MP6T13 |
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