P-CHANNEL ENHANCEMENT

MODE MOSFET

VP1008CSM4

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8447

Issue 2

Page 2 of 3

Symbols

Parameters

Test Conditions

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown

Voltage

VGS = 0

ID = -10µA

-100

-110

V

VGS(th)

Gate Threshold Voltage

VDS = VGS

ID = -1.0mA

-2

-3.4

-4.5

V

VGS = ±20V

VDS = 0V

±100

IGSS

Gate-Source Leakage Current

TJ = 125°C

±500

nA

VDS = -100V

VGS = 0

-10

IDSS

Zero Gate Voltage

Drain Current

TJ = 125°C

-500

µA

On-State Drain Current

VDS = -15V

VGS = -10V

-1.1

-2

A

VGS = -10V

ID = -1.0A

2.5

5

RDS(on)

(2)

Static Drain-Source

On-State Resistance

TJ = 125°C

4.3

8

Ω

gfs

(2)

Forward Transconductance

VDS = -10V

ID = -0.5A

200

325

gos

(2)

Common Source

Output Conductance

VDS = -7.5V

ID = -0.1A

0.45

mƱ

DYNAMIC CHARACTERISTICS

Ciss

Input Capacitance

VGS = 0

75

150

Coss

Output Capacitance

VDS = -25V

40

60

Crss

Reverse Transfer Capacitance

f = 1.0MHz

18

25

pF

td(on)

7

15

tr

Turn-On Time

52

60

td(off)

40

50

ns

tf

Turn-Off Time

VDD = -25V, RL= 47Ω, RG = 50Ω

ID = -0.5A, VGEN = -10V

56

65

Notes

Notes

Notes

Notes

(2)

Pulse Width ≤ 300us, δ ≤ 2%