SHD123636P_09 datasheet(1/3 Pages) SENSITRON

部品番号	SHD123636P

部品情報	POWER SCHOTTKY RECTIFIER Low Reverse Leakage

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メーカー	SENSITRON [Sensitron]

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•

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SENSITRON

SEMICONDUCTOR

TECHNICAL DATA

DATA SHEET 1042, REV. PRELIMINARY

POWER SCHOTTKY RECTIFIER

Low Reverse Leakage

Applications:

• Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

Features:

•

Ultra Low Reverse Leakage Current

•

Soft Reverse Recovery at Low and High Temperature

•

Very Low Forward Voltage Drop

•

Low Power Loss, High Efficiency

•

High Surge Capacity

•

Guard Ring for Enhanced Durability and Long Term Reliability

•

Guaranteed Reverse Avalanche Characteristics

•

Out Performs 200 Volt Ultra Fast Rectifiers

Maximum Ratings:

Characteristics

Symbol

Condition

Max.

Units

Peak Inverse Voltage

VRWM

-

200

V

Max. Average Forward

Current

IF(AV)

50% duty cycle, rectangular

wave form Common Cathode

(N)/Common Anode(P)

150

A

Max. Average Forward

Current

IF(AV)

50% duty cycle, rectangular

wave form Doubler (D)

120

A

Max. Peak One Cycle Non-

Repetitive Surge Current

IFSM

8.3 ms, half Sine wave

(per leg)

1650

A

Non-Repetitive Avalanche

Energy

EAS

TJ = 25 °C, IAS = 1.3 A,

L = 40mH (per leg)

27

mJ

Repetitive Avalanche

Current

IAR

IAS decay linearly to 0 in 1 μs

ƒ limited by T

J max VA=1.5VR

1.3

A

Thermal Resistance

RthJC

Per Package

0.2

°C/W

Max. Junction Temperature

TJ

-

-65 to +175

°C

Max. Storage Temperature

Tstg

-

-65 to +175

°C

Electrical Characteristics:

Characteristics

Symbol

Condition

Max.

Units

Max. Forward Voltage Drop

VF1

@ 120A, Pulse, TJ = 25 °C

(per leg) measured at the leads

1.07

V

VF2

@ 120A, Pulse, TJ = 125 °C

(per leg) measured at the leads

0.91

V

Max. Reverse Current

IR1

@VR = 200V, Pulse,

TJ = 25 °C (per leg)

0.6

mA

IR2

@VR = 200V, Pulse,

TJ = 125 °C (per leg)

6.0

mA

Max. Junction Capacitance

CT

@VR = 5 V, TC = 25 °C

fSIG = 1 MHz,

VSIG = 50mV (p-p) (per leg)

1800

pF

Due to the nature of the 200V Schottky devices, some degradation in trr performance at high temperatures should

be expected, unlike conventional lower voltage Schottkys.

SHD123636P

SHD123636N

SHD123636D

同様の部品番号 - SHD123636P_09

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