PBY305 datasheet(1/2 Pages) DIOTEC

部品番号	PBY305

部品情報	Silicon-Power-Rectifiers

PDF	2 Pages

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メーカー	DIOTEC [Diotec Semiconductor]

ホームページ	http://www.diotec.com

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1 / 2 page

1N1183 ... 1N1190, 1N3766, 1N3768, PBY301 ... PB307

1N1183 ... 1N1190, 1N3766, 1N3768,

PBY301 ... PB307

Silicon-Power-Rectifiers

Silizium-Leistungs-Gleichrichter

Version 2007-05-09

Dimensions - Maße [mm]

Nominal Current

Nennstrom

35 A

Repetitive peak reverse voltage

Periodische Spitzensperrspannung

50 ... 1000 V

Metal case

Metallgehäuse

DO-5

Weight approx.

Gewicht ca.

6 g

Standard polarity: Cathode to stud / Kathode am Gewinde

Index R: Anode to stud / Anode am Gewinde (e. g. 1N1183R)

Standard packaging: bulk

Standard Lieferform: lose im Karton

Maximum ratings

Grenzwerte

Type

Typ

Repetive peak reverse voltage

Periodische Spitzensperrspannung

VRRM [V]

Surge peak reverse voltage

Stoßspitzensperrspannung

VRSM [V]

1N1183 = PBY301

50

60

1N1184 = PBY302

100

120

1N1186 = PBY303

200

240

1N1188 = PBY304

400

480

1N1190 = PBY305

600

720

1N3766 = PBY306

800

1000

1N3768 = PBY307

1000

1200

Max. average forward rectified current, R-load

Dauergrenzstrom in Einwegschaltung mit R-Last

TC = 100°C

IFAV

35 A

Repetitive peak forward current

Periodischer Spitzenstrom

f > 15 Hz

IFRM

110 A 1)

Peak forward surge current, 50/60 Hz half sine-wave

Stoßstrom für eine 50/60 Hz Sinus-Halbwelle

TA = 25°C

IFSM

450/500 A

Rating for fusing, t < 10 ms

Grenzlastintegral, t < 10 ms

TA = 25°C

i2t

1000 A2s

Operating junction temperature – Sperrschichttemperatur

Storage temperature – Lagerungstemperatur

Tj

TS

-65...+175°C

1

Max. case temperature TC = 100°C – Max. Gehäusetemperatur TC = 100°C

http://www.diotec.com/

1

Ø 4+0.5

M6

SW17

Type

13.6

同様の部品番号 - PBY305

メーカー	部品番号	データシート	部品情報
Diotec Semiconductor	PBY305	160Kb / 2P	Silicon-Power Rectifiers

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