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STM32F407IG データシート(PDF) 83 Page - STMicroelectronics

部品番号 STM32F407IG
部品情報  USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera
PDF  154 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32F407IG データシート(HTML) 83 Page - STMicroelectronics

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STM32F405xx, STM32F407xx
Electrical characteristics
Doc ID 022152 Rev 1
83/154
Table 35.
Flash memory programming(1)
1.
TBD stands for “to be defined”.
Symbol
Parameter
Conditions
Min(2)
Typ
Max(2)
2.
Based on characterization, not tested in production.
Unit
tprog
Word programming time
Program/erase parallelism
(PSIZE) = x 8/16/32
-16
100(3)
3.
The maximum programming time is measured after 100K erase operations.
µs
tERASE16KB Sector (16 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
400
800
ms
Program/erase parallelism
(PSIZE) = x 16
-
300
600
Program/erase parallelism
(PSIZE) = x 32
-
250
500
tERASE64KB Sector (64 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-
1200
2400
ms
Program/erase parallelism
(PSIZE) = x 16
-
700
1400
Program/erase parallelism
(PSIZE) = x 32
-
550
1100
tERASE128KB Sector (128 KB) erase time
Program/erase parallelism
(PSIZE) = x 8
-2
4
s
Program/erase parallelism
(PSIZE) = x 16
-1.3
2.6
Program/erase parallelism
(PSIZE) = x 32
-1
2
tME
Mass erase time
Program/erase parallelism
(PSIZE) = x 8
-16
TBD
s
Program/erase parallelism
(PSIZE) = x 16
-11
TBD
Program/erase parallelism
(PSIZE) = x 32
-8
TBD
Vprog
Programming voltage
32-bit program operation
2.7
-
3.6
V
16-bit program operation
2.1
-
3.6
V
8-bit program operation
1.8
-
3.6
V



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