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2N5293 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N5293 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5293 2N5295 2N5297 DESCRIPTION ・With TO-220 package ・High power dissipation APPLICATIONS ・Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2N5293 80 2N5295 60 VCBO Collector-base voltage 2N5297 Open emitter 80 V 2N5293 70 2N5295 40 VCEO Collector-emitter voltage 2N5297 Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 4 A IB Base current 2 A PT Total power dissipation TC=25℃ 36 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 3.47 ℃/W |
同様の部品番号 - 2N5293 |
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同様の説明 - 2N5293 |
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