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2N5633 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2N5633 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2N5632 2N5633 2N5634 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2N5632 100 2N5633 120 VCEO(SUS) Collector-emitter sustaining voltage 2N5634 IC=0.2A ;IB=0 140 V VCEsat-1 Collector-emitter saturation voltage IC=7A; IB=0.7A 1.0 V VCEsat-2 Collector-emitter saturation voltage IC=10A ;IB=2A 3.0 V VBEsat Base-emitter saturation voltage IC=10A ;IB=2A 2.5 V VBE Base-emitter on voltage IC=5A ; VCE=5V 1.5 V 2N5632 VCE=50V; IB=0 2N5633 VCE=60V; IB=0 ICEO Collector cut-off current 2N5634 VCE=70V; IB=0 1.0 mA ICEV Collector cut-off current VCE=ratedVCB; VBE(off)=1.5V TC=150℃ 1.0 5.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 1.0 mA 2N5632 25 100 2N5633 20 80 hFE DC current gain 2N5634 IC=5A ; VCE=5V 15 60 fT Transition frequency IC=1A ; VCE=20V 1.0 MHz |
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