2N5881 datasheet(1/3 Pages) ISC

部品番号	2N5881

部品情報	Silicon NPN Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N5881 2N5882

DESCRIPTION

・With TO-3 package

・Low collector saturation voltage

・Complement to type 2N5879 2N5880

APPLICATIONS

・For general-purpose power amplifier

and switching applications

PINNING

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N5881

60

VCBO

Collector-base voltage

2N5882

Open emitter

80

V

2N5881

60

VCEO

Collector-emitter voltage

2N5882

Open base

80

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

15

A

ICM

Collector current-peak

30

A

IB

Base current

5

A

PD

Total Power Dissipation

TC=25℃

160

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

1.1

℃/W

Fig.1 simplified outline (TO-3) and symbol

同様の部品番号 - 2N5881

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	2N5881	180Kb / 4P	POWER TRANSISTORS(15A,160W)
Boca Semiconductor Corp...	2N5881	186Kb / 4P	COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
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Savantic, Inc.	2N5881	112Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2N5881	118Kb / 3P	Silicon NPN Power Transistors

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同様の説明 - 2N5881

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