2N6034 datasheet(1/3 Pages) ISC

部品番号	2N6034

部品情報	Silicon PNP Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2N6034 2N6035 2N6036

DESCRIPTION

・With TO-126 package

・Complement to type 2N6037/6038/6039

・DARLINGTON

・High DC current gain

APPLICATIONS

・Designed for general-purpose amplifier

and low-speed switching applications

PINNING(see Fig.2)

DESCRIPTION

1

Emitter

2

Collector

3

Base

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6034

-40

2N6035

-60

VCBO

Collector-base voltage

2N6036

Open emitter

-80

V

2N6034

-40

2N6035

-60

VCEO

Collector-emitter voltage

2N6036

Open base

-80

V

VEBO

Emitter-base voltage

Open collector

-5

V

IC

Collector current

-4

A

ICM

Collector current-peak

-8

A

IB

Base current

-0.1

A

PD

Total Power Dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

3.12

℃/W

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