2N6466 datasheet(1/3 Pages) ISC

部品番号	2N6466

部品情報	Silicon NPN Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2N6465 2N6466

DESCRIPTION

・With TO-66 package

・Excellent safe operating area

・Complement to type 2N6467 2N6468

APPLICATIONS

・For use in audio amplifier applications

PINNING(see Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

Absolute maximum ratings(Ta=℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2N6465

110

VCBO

Collector-base voltage

2N6466

Open emitter

130

V

2N6465

100

VCEO

Collector-emitter voltage

2N6466

Open base

120

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

4

A

PD

Total power dissipation

TC=25℃

40

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance junction to case

2.5

℃/W

Fig.1 simplified outline (TO-66) and symbol

同様の部品番号 - 2N6466

メーカー	部品番号	データシート	部品情報
Seme LAB	2N6466	10Kb / 1P	Bipolar NPN Device in a Hermetically sealed TO66 Metal Package.
Central Semiconductor C...	2N6466	51Kb / 1P	Power Transistors
Savantic, Inc.	2N6466	113Kb / 3P	Silicon NPN Power Transistors
New Jersey Semi-Conduct...	2N6466	203Kb / 2P	Silicon N-P-N and P-N-P Medium-Power Transistors
New Jersey Semi-Conduct...	2N6466	203Kb / 2P	Silicon N-P-N and P-N-P Medium-Power Transistors

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同様の説明 - 2N6466

メーカー	部品番号	データシート	部品情報
Motorola, Inc	BUS47	79Kb / 2P	NPN SILICON POWER TRANSISTORS
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