2N6674 datasheet(1/2 Pages) ISC

部品番号	2N6674

部品情報	isc Silicon NPN Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Website：www.iscsemi.cn

isc Silicon NPN Power Transistors

2N6674/6675

DESCRIPTION

·High Power Dissipation

·High Switching Speed

·Collector-Emitter Breakdown Voltage-

:

V(BR)CEO= 300V(Min)- 2N6674

= 400V(Min)- 2N6675

APPLICATIONS

Designed for high voltage switching applications such as:

·Switching regulators

·Inverters

·Solenoid and relay drivers

·Deflection circuits

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.0

℃/W

SYMBOL

PARAMETER

VALUE

UNIT

2N6674

450

VCBO

Collector-Base Voltage

2N6675

650

V

2N6674

300

VCEO

Collector-Emitter Voltage

2N6675

400

2N6674

450

VCEX

Collector-Emitter Voltage

2N6675

650

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

15

A

IB

Base Current-Continuous

5.0

A

Collector Power Dissipation@Ta=25℃

6

PC

Collector Power Dissipation@TC=25℃

175

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

同様の部品番号 - 2N6674

メーカー	部品番号	データシート	部品情報
Microsemi Corporation	2N6674	60Kb / 2P	NPN POWER SILICON TRANSISTOR
Central Semiconductor C...	2N6674	53Kb / 1P	Power Transistors
Microsemi Corporation	2N6674	344Kb / 3P	NPN Darlington Transistors
Savantic, Inc.	2N6674	111Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2N6674	154Kb / 3P	Silicon NPN Power Transistors

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