2SB553 datasheet(2/4 Pages) ISC

部品番号	2SB553

部品情報	Silicon PNP Power Transistors

PDF	4 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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2 / 4 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB553

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-50mA; IB=0

-50

VCEsat

Collector-emitter saturation voltage

IC=-4A; IB=-0.4A

-0.2

-0.4

VBEsat

Base-emitter saturation voltage

IC=-4A; IB=-0.4A

-0.9

-1.2

ICBO

Collector cut-off current

VCB=-70V; IE=0

-30

μA

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-50

μA

hFE-1

DC current gain

IC=-1A ; VCE=-1V

240

hFE-2

DC current gain

IC=-4A ; VCE=-1V

COB

Collector output capacitance

IE=0 ; VCB=-10V; f=1MHz

250

Transition frequency

IC=-1A ; VCE=-4V

MHz

Switching times

ton

Turn-on time

0.2

μs

Storage time

2.5

μs

Fall time

IB1=-IB2=-0.3A; VCC≈-30V

RL=10Ω

0.5

μs

hFE-1Classifications

70-140

120-240

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