2SB827 datasheet(2/4 Pages) ISC

部品番号	2SB827

部品情報	Silicon PNP Power Transistors

PDF	4 Pages

Scroll/Zoom	100%

メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

Logo

2 / 4 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB827

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-1mA ;RBE=

∞

-50

V(BR)CBO

Collector-base breakdown voltage

IC=-1mA ;IE=0

-60

V(BR)EBO

Emitter-base breakdown voltage

IE=-1mA ;IC=0

-6

VCEsat

Collector-emitter saturation voltage

IC=-4A; IB=-0.4A

-0.4

ICBO

Collector cut-off current

VCB=-40V ;IE=0

-0.1

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-0.1

hFE-1

DC current gain

IC=-1A ; VCE=-2V

280

hFE-2

DC current gain

IC=-5A ; VCE=-2V

Transition frequency

IC=-1A ; VCE=-5V

MHz

Switching times

ton

Turn-on time

0.20

tstg

Storage time

0.70

Fall time

IC=-2.0A; IB1=-IB2=-0.2A

VCC=-20V;RL=10Ω

0.10

hFE-1 Classifications

70-140

100-200

140-280

2SB827 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited

2SB827 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited

Html Pages

1 2 3 4

データシートダウンロード