2SB940 datasheet(2/4 Pages) ISC

部品番号	2SB940

部品情報	Silicon PNP Power Transistors

PDF	4 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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2 / 4 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SB940,2SB940A

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2SB940

-150

V(BR)CEO

Collector-emitter

breakdown voltage

2SB940A

IC=-5mA ,IB=0

-180

V(BR)CBO

Collector-base breakdown voltage

IC=-50μA ,IE=0

-200

V(BR)EBO

Emitter-base breakdown voltage

IC=-500μA ,IC=0

-6

VCEsat

Collector-emitter saturation voltage

IC=-0.5A, IB=-50mA

-1.0

VBE

Base-emitter voltage

IC=-0.4A ; VCE=-10V

-1.0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

-50

μA

ICBO

Collector cut-off current

VCB=-200V; IE=0

-50

μA

hFE-1

DC current gain

IC=-0.15A ; VCE=-10V

240

hFE-2

DC current gain

IC=-0.4A ; VCE=-10V

Transition frequency

IC=-0.5A; VCE=-10V,f=10MHz

MHz

hFE-1 Classifications

60-140

100-240

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