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SW19N10 データシート(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd. |
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SW19N10 データシート(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd. |
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4 / 7 page ![]() Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Fig. 9. Maximum drain current vs. case temperature. Fig. 8. On resistance variation vs. junction temperature Fig. 10. Maximum safe operating area Fig. 11. Transient thermal response curve 4/7 Fig 7. Breakdown Voltage Variation vs. Junction Temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 ،ط Notes : 1. V GS = 0 V 2. I D = 250 ¥ىA T J , Junction Temperature [ oC] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 ،ط Notes : 1. V GS = 10 V 2. I D = 30 A T J , Junction Temperature [ oC] 10 -1 10 0 10 1 10 2 10 0 10 1 10 2 10 3 DC 10 ms 1 ms 100 s Operation in This Area is Limited by R DS(on) ،ط Notes : 1. T C = 25 oC 2. T J = 175 oC 3. Single Pulse V DS , Drain-Source Voltage [V] 25 50 75 100 125 150 175 0 20 40 60 80 T C' Case Temperature [ oC] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 ،ط Notes : 1. Z ¥èJC (t) = 0.92 ،ة/W Max. 2. Duty Factor, D=t 1 /t 2 3. T JM - T C = P DM * Z ¥èJC (t) single pulse D=0.5 0.02 0.2 0.05 0.1 0.01 t 1 , Square Wave Pulse Duration [sec] SW19N10 SAMWIN |
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