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SW226N データシート(PDF) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

部品番号 SW226N
部品情報  N-channel MOSFET
PDF  7 Pages
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メーカー  SEMIPOWER [Xian Semipower Electronic Technology Co., Ltd.]
ホームページ  http://www.samwinsemi.com
Logo SEMIPOWER - Xian Semipower Electronic Technology Co., Ltd.

SW226N データシート(HTML) 4 Page - Xian Semipower Electronic Technology Co., Ltd.

  SW226N Datasheet HTML 1Page - Xian Semipower Electronic Technology Co., Ltd. SW226N Datasheet HTML 2Page - Xian Semipower Electronic Technology Co., Ltd. SW226N Datasheet HTML 3Page - Xian Semipower Electronic Technology Co., Ltd. SW226N Datasheet HTML 4Page - Xian Semipower Electronic Technology Co., Ltd. SW226N Datasheet HTML 5Page - Xian Semipower Electronic Technology Co., Ltd. SW226N Datasheet HTML 6Page - Xian Semipower Electronic Technology Co., Ltd. SW226N Datasheet HTML 7Page - Xian Semipower Electronic Technology Co., Ltd.  
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Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Fig. 9. Maximum drain current vs.
case temperature.
Fig. 8. On resistance variation
vs. junction temperature
Fig. 10. Maximum safe operating area
Fig. 11. Transient thermal response curve
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
،ط Notes :
1. V
GS
= 0 V
2. I
D
= 250 ¥ىA
T
J
, Junction Temperature [
oC]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
DC
10 ms
1 ms
100 s
Operation in This Area
is Limited by R
DS(on)
،ط Notes :
1. T
C
= 25
oC
2. T
J
= 150
oC
3. Single Pulse
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
1
2
3
4
5
T
C'
Case Temperature [
oC]
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
،ط Notes :
1. Z
¥èJC
(t) = 1.25 ،ة/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
¥èJC
(t)
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
t
1
, Square Wave Pulse Duration [sec]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
T
J
, Junction Temperature [
oC]
SW226N
SAMWIN
4/7



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