2SC2331 datasheet(1/3 Pages) ISC

部品番号	2SC2331

部品情報	Silicon NPN Power Transistors

PDF	3 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2331

DESCRIPTION

・With TO-220 package

・Complement to type 2SA1008

・Low collector saturation voltage

・Fast switching speed

APPLICATIONS

・Switching regulators

・DC-DC converters

・High frequency power amplifiers

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

100

V

VCEO

Collector-emitter voltage

Open base

100

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

2.0

A

ICM

Collector current-Peak

4.0

A

IB

Base current

1.0

A

Ta=25℃

1.5

PT

Total power dissipation

TC=25℃

15

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-220) and symbol

同様の部品番号 - 2SC2331

メーカー	部品番号	データシート	部品情報
NEC	2SC2331	265Kb / 6P	Silicon Power Transistor
Savantic, Inc.	2SC2331	103Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC2331	51Kb / 3P	Silicon Power Transistors
New Jersey Semi-Conduct...	2SC2331	63Kb / 2P	Silicon NPN Power Transistors
Savantic, Inc.	2SC2331	104Kb / 3P	Silicon NPN Power Transistors

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同様の説明 - 2SC2331

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Motorola, Inc	BUS47	79Kb / 2P	NPN SILICON POWER TRANSISTORS
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