2SC2590 datasheet(1/4 Pages) ISC

部品番号	2SC2590

部品情報	Silicon NPN Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SC2590

DESCRIPTION

・

・With TO-126 package

・Complement to type 2SA1110

・Excellent current IC characteristics of forward

current transfer ratio hFE vs. collector

・High transition frequency fT

・Optimum for the driver stage of a

40 W to 60 W output amplifier

APPLICATIONS

・For low-frequency power amplification

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute Maximun Ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

120

V

VCEO

Collector-emitter voltage

Open base

120

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current (DC)

0.5

A

ICM

Collector current-Peak

1.0

A

PC

Collector power dissipation

TC=25℃

1.2*

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Note)

*: Without heat sink

同様の部品番号 - 2SC2590

メーカー	部品番号	データシート	部品情報
Panasonic Semiconductor	2SC2590	80Kb / 3P	Silicon NPN epitaxial planar type
Savantic, Inc.	2SC2590	129Kb / 4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC2590	187Kb / 4P	Silicon NPN Power Transistors
Savantic, Inc.	2SC2590	131Kb / 4P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	2SC2590	187Kb / 4P	Silicon NPN Power Transistors

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同様の説明 - 2SC2590

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