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2SC2898 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2898 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page  Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2898 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; L=100mH 400 V V(BR) EBO Emitter-base breakdown voltage IE=10mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4.0A; IB=0.8A(pulse test) 1.0 V VBEsat Base-emitter saturation voltage IC=4.0A; IB=0.8A(pulse test) 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 50 μA ICEO Collector cut-off current VCE=350V; RBE=∞ 50 μA hFE-1 DC current gain IC=4A ; VCE=5V(pulse test) 15 hFE-2 DC current gain IC=8A ; VCE=5V(pulse test) 7 Switching times ton Turn-on time 0.8 μs ts Storage time 2.0 μs tf Fall time IC=8A, IB1=-IB2=1.6A VCC≈150V 0.8 μs |
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