2SC3264 datasheet(1/2 Pages) ISC

部品番号	2SC3264

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC3264

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

V(BR)CEO= 230V(Min)

·Good Linearity of hFE

·Complement to Type 2SA1295

APPLICATIONS

·Designed for audio and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

230

V

VCEO

Collector-Emitter Voltage

230

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

17

A

IB

B

Base Current-Continuous

5

A

PC

Collector Power Dissipation

@ TC=25℃

200

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

同様の部品番号 - 2SC3264

メーカー	部品番号	データシート	部品情報
Mospec Semiconductor	2SC3264	127Kb / 3P	POWER TRANSISTORS(17A,230V,200W)
Sanken electric	2SC3264	24Kb / 1P	Silicon NPN Epitaxial Planar Transistor(Audio and General Purpose)
Savantic, Inc.	2SC3264	167Kb / 4P	Silicon NPN Power Transistors
Allegro MicroSystems	2SC3264	33Kb / 1P	Silicon NPN Epitaxial Planar Transistor
Sanken electric	2SC3264	34Kb / 1P	Silicon NPN Epitaxial Planar Transistor

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