2SC3833 datasheet(1/2 Pages) ISC

部品番号	2SC3833

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

2SC3833

DESCRIPTION

·High Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 400V(Min)

·High Switching Speed

·High Reliability

APPLICATIONS

·Designed for switching regulator and general purpose

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

500

V

VCEO

Collector-Emitter Voltage

400

V

VEBO

Emitter-Base voltage

10

V

IC

Collector Current-Continuous

12

A

ICM

Collector Current-Peak

24

A

IB

B

Base Current-Continuous

4

A

PC

Collector Power Dissipation

@ TC=25℃

100

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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メーカー	部品番号	データシート	部品情報
Sanken electric	2SC3833	25Kb / 1P	Silicon NPN Triple Diffused Planar Transistor(Switching Regulator and General Purpose)

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