2SD716 datasheet(1/3 Pages) ISC

部品番号	2SD716

部品情報	Silicon NPN Power Transistors

PDF	3 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD716

DESCRIPTION

・With TO-3P(I) package

・Complement to type 2SB686

APPLICATIONS

・Power amplifier applications

・Recommend for 30~35W high fidelity audio

frequency amplifier output stage

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

100

V

VCEO

Collector-emitter voltage

Open base

100

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current

6

A

IE

Emitter current

-6

A

PT

Total power dissipation

TC=25℃

60

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Fig.1 simplified outline (TO-3P(I)) and symbol

同様の部品番号 - 2SD716

メーカー	部品番号	データシート	部品情報
Wing Shing Computer Com...	2SD716	89Kb / 1P	SILICON EPITAXIAL PLANAR TRANSISTOR(GENERAL DESCRIPTION)
Savantic, Inc.	2SD716	125Kb / 3P	Silicon NPN Power Transistors

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