2SD1769 datasheet(1/2 Pages) ISC

部品番号	2SD1769

部品情報	isc Silicon NPN Darlington Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD1769

DESCRIPTION

·High DC Current Gain-

: hFE = 2000(Min)@ IC= 3A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 120V(Min)

·Low Collector-Emitter Saturation Voltage-

: VCE(sat) = 1.5V(Max)@ IC= 3A

APPLICATIONS

·Designed for solenoid driver, relay and motor, series

regulator, and general purpose applications.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

6

A

ICM

Collector Current-Peak

10

A

IB

B

Base Current

1

A

PC

Collector Power Dissipation

TC=25℃

50

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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