2SD2016 datasheet(1/2 Pages) ISC

部品番号	2SD2016

部品情報	isc Silicon NPN Darlington Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistor

2SD2016

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 200V(Min)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max) @IC= 1A

·High DC Current Gain

: hFE= 1000(Min) @ IC= 1A, VCE= 4V

APPLICATIONS

·Igniter, relay and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

200

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3

A

IB

B

Base Current-Continuous

0.5

A

PC

Collector Power Dissipation

@ TC=25℃

25

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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