BD190 datasheet(1/3 Pages) ISC

部品番号	BD190

部品情報	Silicon PNP Power Transistors

PDF	3 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD190

DESCRIPTION

・

・With TO-126 package

・High current

・Complement to type BD189

APPLICATIONS

・For use in 5 to 10 watt audio amplifiers

utilizing complementary or quasi

complementary circuits.

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings (Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

-70

V

VCEO

Collector-emitter voltage

Open base

-60

V

VEBO

Emitter -base voltage

Open collector

-5

V

IC

Collector current (DC)

-4

A

IB

Base current

-2

A

Pt

Total power dissipation

Tmb≤70℃

40

W

Tj

Junction temperature

-65~150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-a

Thermal resistance, junction to case

3.12

℃/W

同様の部品番号 - BD190

メーカー	部品番号	データシート	部品情報
Motorola, Inc	BD190	103Kb / 2P	PLASTIC MEDIUM POWER SILICON PNP TRANSISTOR
Savantic, Inc.	BD190	108Kb / 3P	Silicon PNP Power Transistors
Savantic, Inc.	BD190	110Kb / 3P	Silicon NPN Power Transistors

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