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BD230 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited

部品番号 BD230
部品情報  isc Silicon NPN Power Transistor
PDF  2 Pages
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メーカー  ISC [Inchange Semiconductor Company Limited]
ホームページ  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD230 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD226/228/230
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 0.15A
·Complement to Type BD227/229/231
APPLICATIONS
·Designed for use in driver stages in television circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BD226
45
BD228
60
VCBO
Collector-Base Voltage
BD230
100
V
BD226
45
BD228
60
VCEO
Collector-Emitter Voltage
BD230
80
V
BD226
45
BD228
60
VCER
Collector-Emitter
Voltage(RBE= 1kΩ)
BD230
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
ICM
Collector Current-Peak
3.0
A
PC
Collector Power Dissipation
@ TC≤62℃
12.5
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
7
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
100
℃/W
isc Website：www.iscsemi.cn


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