BD329 datasheet(1/2 Pages) ISC

部品番号	BD329

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD329

DESCRIPTION

·DC Current Gain-

: hFE= 85~375(Min)@ IC= 0.5A

·Collector-Emitter Sustaining Voltage -

: VCEO(SUS)= 20V(Min)

·Complement to type BD330

APPLICATIONS

·Especially for battery equipped applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

32

V

VCEO

Collector-Emitter Voltage

20

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

3

A

IBM

Base Current-Peak

1

A

PC

Collector Power Dissipation

@ TC=25℃

15

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

7

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

100

℃/W

isc Website：www.iscsemi.cn

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