BD539D datasheet(1/2 Pages) ISC

部品番号	BD539D

部品情報	isc Silicon NPN Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

Logo

1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD539D

DESCRIPTION

·DC Current Gain -

: hFE = 40(Min.)@ IC= 0.5A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 120V(Min)

·Complement to Type BD540D

APPLICATIONS

·Designed for use in medium power linear and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCEO

Collector-Emitter Voltage

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

5

A

Collector Power Dissipation

@ Ta=25℃

2

PC

Collector Power Dissipation

@ TC=25℃

45

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

2.78

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

62.5

℃/W

isc Website：www.iscsemi.cn

同様の部品番号 - BD539D

メーカー	部品番号	データシート	部品情報
Power Innovations Ltd	BD539D	85Kb / 6P	NPN SILICON POWER TRANSISTORS
Bourns Electronic Solut...	BD539D	104Kb / 5P	NPN SILICON POWER TRANSISTORS

More results

同様の説明 - BD539D

メーカー	部品番号	データシート	部品情報
Inchange Semiconductor ...	BD907	106Kb / 2P	isc Silicon NPN Power Transistor
	BU2727AF	98Kb / 2P	isc Silicon NPN Power Transistor
	BU326	57Kb / 2P	isc Silicon NPN Power Transistor
	BU326A	129Kb / 2P	isc Silicon NPN Power Transistor
	MJ413	71Kb / 2P	isc Silicon NPN Power Transistor
	BUX47A	76Kb / 2P	isc Silicon NPN Power Transistor
	BUV48CFI	111Kb / 2P	isc Silicon NPN Power Transistor
	BUV70	102Kb / 2P	isc Silicon NPN Power Transistor
	BU406	134Kb / 3P	isc Silicon NPN Power Transistor