BD540B datasheet(1/2 Pages) ISC

部品番号	BD540B

部品情報	isc Silicon PNP Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD540B

DESCRIPTION

·DC Current Gain -

: hFE = 40(Min.)@ IC= -0.5A

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -80V(Min)

·Complement to Type BD539B

APPLICATIONS

·Designed for use in medium power linear and switching

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-80

V

VCEO

Collector-Emitter Voltage

-80

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

Collector Power Dissipation

@ Ta=25℃

2

PC

Collector Power Dissipation

@ TC=25℃

45

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

2.78

℃/W

Rth j-a

Thermal Resistance, Junction to Ambient

62.5

℃/W

isc Website：www.iscsemi.cn

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