BD808 datasheet(1/2 Pages) ISC

部品番号	BD808

部品情報	isc Silicon PNP Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon PNP Power Transistor

BD808

DESCRIPTION

·DC Current Gain -

: hFE =30@ IC= -2A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -60V(Min)

·Complement to Type BD807

APPLICATIONS

·Designed for use in high power audio amplifiers utilizing

complementary or quasi complementary circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-70

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-10

A

IB

B

Base Current

-6

A

PC

Collector Power Dissipation

@ TC=25℃

90

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.39

℃/W

isc Website：www.iscsemi.cn

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