BD905 datasheet(1/2 Pages) ISC

部品番号	BD905

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BD905

DESCRIPTION

·DC Current Gain -

: hFE = 40(Min.)@ IC= 0.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 45V(Min)

·Complement to Type BD906

APPLICATIONS

·Designed for use in general purpose power amplifier and

switching applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

45

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

20

A

IB

B

Base Current

5

A

PC

Collector Power Dissipation

@ TC=25℃

90

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.38

℃/W

isc Website：www.iscsemi.cn

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