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BD943F データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BD943F データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BD943F/945F/947F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BD943F 22 BD945F 32 VCEO(SUS) Collector-Emitter Sustaining Voltage BD947F IC= 100mA ; IB= 0 45 V BD943F/945F IC= 2A; IB= 0.2A B 0.5 VCE(sat) Collector-Emitter Saturation Voltage BD947F IC= 3A; IB= 0.3A B 0.7 V BD943F/945F IC= 2A; VCE= 1V 1.1 VBE(on) Base-Emitter On Voltage BD947F IC= 3A; VCE= 1V 1.3 V ICBO Collector Cutoff Current VCB= VCBOmax; IE= 0 VCB= VCBOmax; IE= 0,TJ=150℃ 0.05 1 mA BD943F VCE= 15V; IB= 0 B BD945F VCE= 20V; IB= 0 B ICEO Collector Cutoff Current BD947F VCE= 25V; IB= 0 B 0.1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 0.2 mA hFE-1 DC Current Gain IC= 10mA ; VCE= 5V 25 hFE-2 DC Current Gain IC= 500mA ; VCE= 1V 85 475 BD943F/945F 50 hFE-3 DC Current Gain BD947F IC= 2A ; VCE= 1V 40 hFE-4 DC Current Gain--Only For BD947F IC= 3A ; VCE= 1V 30 fT Current-Gain—Bandwidth Product IC= 250mA ; VCE= 1V 3 MHz isc Website:www.iscsemi.cn 2 |
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