BDT61 datasheet(1/2 Pages) ISC

部品番号	BDT61

部品情報	isc Silicon NPN Darlington Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Darlington Power Transistors

BDT61/A/B/C

DESCRIPTION

·DC Current Gain -hFE = 750(Min)@ IC= 1.5A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 60V(Min)- BDT61; 80V(Min)- BDT61A;

100V(Min)- BDT61B; 120V(Min)- BDT61C

·Complement to Type BDT60/A/B/C

APPLICATIONS

·Designed for use in audio amplifier output stages , general

purpose amplifier and high speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

BDT61

60

BDT61A

80

BDT61B

100

VCBO

Collector-Base

Voltage

BDT61C

120

V

BDT61

60

BDT61A

80

BDT61B

100

VCEO

Collector-Emitter

Voltage

BDT61C

120

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

IB

B

Base Current

0.1

A

Collector Power Dissipation

Ta=25℃

2

PC

Collector Power Dissipation

TC=25℃

50

W

Tj

Junction Temperature

150

℃

Tstg

Storage Ttemperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.5

℃/W

Rth j-c

Thermal Resistance,Junction to Ambient

62.5

℃/W

isc Website：www.iscsemi.cn

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