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データシートサーチシステム |
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データシートサーチシステム |
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BDX68 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BDX68 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlington Power Transistor BDX68/A/B/C DESCRIPTION ·High DC Current Gain- : hFE= 1000(Min)@ IC= -20A ·Low Saturation Voltage ·Complement to Type BDX69/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BDX68 -80 BDX68A -100 BDX68B -120 VCBO Collector-Base Voltage BDX68C -140 V BDX68 -60 BDX68A -80 BDX68B -100 VCEO Collector-Emitter Voltage BDX68C -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -40 A IB B Base Current -500 mA PC Collector Power Dissipation @ TC=25℃ 150 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn |
同様の部品番号 - BDX68 |
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同様の説明 - BDX68 |
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