BDY45 datasheet(1/2 Pages) ISC

部品番号	BDY45

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BDY45

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 250V(Min.)

·DC Current Gain-

: hFE=20(Min.)@IC = 2A

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max)@ IC = 15A

·High Switching Speed

APPLICATIONS

·Voltage regulator

·Inverter

·Switching mode power supply

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

400

V

VCES

Collector-Emitter Voltage

400

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

17

A

IB

B

Base Current

5

A

PC

Collector Power Dissipation@TC≤45℃

95

W

TJ

Junction Temperature

175

℃

Tstg

Storage Temperature

-65~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.37

℃/W

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