BU105 datasheet(1/2 Pages) ISC

部品番号	BU105

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU105

DESCRIPTION

·High Voltage-VCER= 1500V(Min.)

·Collector-Emitter Saturation Voltage-

: VCE(sat)= 5.0V(Max.)@ IC= 2.5A

APPLICATIONS

·Designed for use in line operated B&W(19 and 20 inch 110℃

deflection circuits ) or color

( 11 and 14 inch 90℃ deflection

circuits TV receivers.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

1500

V

VCER

Collector-Emitter Voltage RBE= 100Ω

1500

V

VCEO

Collector-Emitter Voltage

750

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

2.5

A

PC

Collector Power Dissipation

@TC= 90℃

10

W

TJ

Junction Temperature

115

℃

Tstg

Storage Temperature

-65~115

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.5

℃/W

isc Website：www.iscsemi.cn

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