BU506F datasheet(1/2 Pages) ISC

部品番号	BU506F

部品情報	isc Silicon NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU506F

DESCRIPTION

·High Voltage

·High Switching Speed

APPLICATIONS

·Designed for use in horizontal deflection circuits of color TV

receivers and in line-operated switch-mode applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage-VBE=0

1500

V

VCEO

Collector-Emitter Voltage

700

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

5

A

ICM

Collector Current-Peak

8

A

IB

B

Base Current-Continuous

3

A

IBM

Base Current-Peak

5

A

PC

Collector Power Dissipation

@ TC=25℃

20

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

6.35

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

55

℃/W

isc Website：www.iscsemi.cn

同様の部品番号 - BU506F

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BU506F	83Kb / 12P	Silicon diffused power transistors 1997 Aug 14
New Jersey Semi-Conduct...	BU506F	129Kb / 2P	Silicon NPN Power Transistor

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