BU522B datasheet(1/2 Pages) ISC

部品番号	BU522B

部品情報	isc Silicon Darlington NPN Power Transistor

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon Darlington NPN Power Transistor

BU522B

DESCRIPTION

·High Voltage

·Low Collector Saturation Voltage-

: VCE(sat)= 2.0V @ IC= 4A

APPLICATIONS

·Designed for use in ignition circuit.

ABSOLUTE MAXIMUM RATINGS (Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCER(SUS)

Collector-Emitter Voltage

425

V

VCER

Collector-Emitter Voltage

450

V

VCBO

Collector-Base Voltage

475

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current

7

A

IB

B

Base Current

2

A

PC

Collector Power Dissipation

@TC=25℃

75

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.67

℃/W

isc Website：www.iscsemi.cn

同様の部品番号 - BU522B

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