BU606 datasheet(1/2 Pages) ISC

部品番号	BU606

部品情報	isc Silicon NPN Power Transistor

PDF	2 Pages

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BU606

DESCRIPTION

·High Voltage: VCEV= 400V(Min)

·Fast Switching Speed-

: tf= 0.75μs(Max)

·Low Saturation Voltage-

: VCE(sat)= 1.0V(Max)@ IC= 5A

APPLICATIONS

·Designed for use in horizontal deflection output stages

of TV’s and CRT’s

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

400

V

VCEV

Collector-Emitter Voltage

400

V

VCEO

Collector-Emitter Voltage

200

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7

A

ICP

Collector Current-Peak Repetitive

10

A

ICP

Collector Current- Peak (10ms)

15

A

IB

B

Base Current

4

A

PC

Collector Power Dissipation

@ TC=25℃

90

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

isc Website：www.iscsemi.cn

同様の部品番号 - BU606

メーカー	部品番号	データシート	部品情報
New Jersey Semi-Conduct...	BU606	130Kb / 2P	Silicon NPN Power Transistor

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