BUL310 datasheet(1/3 Pages) ISC

部品番号	BUL310

部品情報	Silicon NPN Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUL310

DESCRIPTION

・

・With TO-220C package

・High voltage,high speed

・Wide area of safe operation

APPLICATIONS

・Electronic ballasts for fluorescent lighting

・Switch mode power supplies

・Flyback and forward single transistor

low power converters

PINNING

DESCRIPTION

1

Base

2

Collector;connected to

mounting base

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

1000

V

VCEO

Collector-emitter voltage

Open base

500

V

VEBO

Emitter-base voltage

Open collector

9

V

IC

Collector current (DC)

5

A

ICM

Collector current-Peak

tp<5ms

10

A

IB

Base current (DC)

3

A

IBM

Base current-Peak

tp<5ms

4

A

Ptot

Total power dissipation

TC=25℃

75

W

Tj

Maximum operating junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-case

Thermal resistance junction to case

1.65

℃/W

同様の部品番号 - BUL310

メーカー	部品番号	データシート	部品情報
STMicroelectronics	BUL310	64Kb / 6P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Jan-1999
	BUL310	88Kb / 7P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS Sep-1997
	BUL310	207Kb / 6P	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Feb-2002
Savantic, Inc.	BUL310	99Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	BUL310	101Kb / 3P	Silicon NPN Power Transistors

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同様の説明 - BUL310

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