BUW13W datasheet(1/3 Pages) ISC

部品番号	BUW13W

部品情報	Silicon NPN Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUW13W BUW13AW

DESCRIPTION

・With TO-247 package

・High voltage,high speed

APPLICATIONS

・Converters

・Inverters

・Switching regulators

・Motor control systems

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Collector

3

Emitter

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

BUW13W

850

VCBO

Collector-base voltage

BUW13AW

Open emitter

1000

V

BUW13W

400

VCEO

Collector-emitter voltage

BUW13AW

Open base

450

V

VEBO

Emitter-base voltage

Open collector

9

V

IC

Collector current

15

A

ICM

Collector current-peak

30

A

IB

Base current

6

A

IBM

Base current-peak

9

A

PT

Total power dissipation

TC=25℃

175

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-mb

Thermal resistance from junction to mounting base

0.7

K/W

Fig.1 simplified outline (TO-247) and symbol

同様の部品番号 - BUW13W

メーカー	部品番号	データシート	部品情報
NXP Semiconductors	BUW13W	79Kb / 12P	Silicon diffused power transistors 1997 Aug 13
Savantic, Inc.	BUW13W	129Kb / 3P	Silicon NPN Power Transistors
Savantic, Inc.	BUW13W	130Kb / 3P	Silicon NPN Power Transistors

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同様の説明 - BUW13W

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