BUW24 datasheet(1/3 Pages) ISC

部品番号	BUW24

部品情報	Silicon NPN Power Transistors

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メーカー	ISC [Inchange Semiconductor Company Limited]

ホームページ	http://www.iscsemi.cn

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1 / 3 page

Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

BUW24

DESCRIPTION

・With TO-3 package

・High dielectric strength

・Short switching time

APPLICATIONS

・Suitable for use in clocked

voltatge converters

PINNING (See Fig.2)

DESCRIPTION

1

Base

2

Emitter

3

Collector

MAXIMUN RATINGS

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

VCBO

Collector-base voltage

Open emitter

450

V

VCEO

Collector-emitter voltage

Open base

350

V

VEBO

Emitter-base voltage

Open collector

7

V

IC

Collector current

10

A

IB

Base current

3

A

PT

Total power dissipation

Tmb≤25℃

100

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-c

Thermal resistance from junction to case

1.25

℃/W

Fig.1 simplified outline (TO-3) and symbol

同様の部品番号 - BUW24

メーカー	部品番号	データシート	部品情報
Savantic, Inc.	BUW24	115Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	BUW24	89Kb / 3P	Silicon Power Transistors
Savantic, Inc.	BUW24	117Kb / 3P	Silicon NPN Power Transistors
Quanzhou Jinmei Electro...	BUW24_2015	89Kb / 3P	Silicon Power Transistors

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同様の説明 - BUW24

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