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MJ3772 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ3772 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ3772 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- Vce(sat)=0.8V(Max)@Ic=10A ·Low Leakage - Icbo=1mA(max)@100V ·High Current-Gain-Bandwidth Product- fT=2MHz(min)@Ic=1A APPLICATIONS ·Designed for power amplifier and switching applications. ·For ultimate circuit performance based on the design requirements. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 20 A IB B Base Current-Continuous 5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website:www.iscsemi.cn |
同様の部品番号 - MJ3772 |
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同様の説明 - MJ3772 |
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