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PMD17K80 データシート(PDF) 1 Page - Inchange Semiconductor Company Limited |
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PMD17K80 データシート(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD17K80 DESCRIPTION ·High DC current gain ·Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) ·Complement to type PMD16K80 APPLICATIONS ·Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current -Continuous -20 A ICP Collector Current-Peak -40 A IB B Base Current -0.5 A PC Collector Power Dissipation@TC=25℃ 200 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c ThermalResistance, Junction to Case 0.875 ℃/W isc Website：www.iscsemi.cn |
同様の部品番号 - PMD17K80 |
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同様の説明 - PMD17K80 |
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