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S2818 データシート(PDF) 2 Page - Inchange Semiconductor Company Limited |
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S2818 データシート(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor S2818 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0; L= 25mH 700 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.5A; IB= 2A 1.5 V ICES Collector Cutoff Current VCE= 1500V; VBE= 0 1.0 mA hFE DC Current Gain IC= 4.5A; VCE= 5V 2.25 COB Output Capacitance IE= 0; VCB= 10V; f= 1MHz 125 pF fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 7 MHz VECF C-E Diode Forward Voltage IF= 5A 2.0 V Switching Times ts Storage Time 10 μs tf Fall Time IC= 4.5A; IB(end)= 1.8A 0.7 μs isc Website:www.iscsemi.cn |
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