BF2000 datasheet(2/3 Pages) SIEMENS

部品番号	BF2000

部品情報	Silicon N Channel MOSFET Tetrode

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メーカー	SIEMENS [Siemens Semiconductor Group]

ホームページ	http://www.siemens.com/

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BF 2000

Semiconductor Group

Au -03-1998

Electrical Characteristics at

TA = 25 °C; unless otherwise specified.

Parameter

Symbol

Values

Unit

typ.

max.

min.

DC characteristics

Drain-source breakdown voltage

ID = 10 µA, -VG1S = 4 V, - VG2S = 4 V

V(BR)DS

Gate 1 source breakdown voltage

IG1S = 10 mA, VG2S = VDS = 0

V(BR)G1SS

V(BR)G2SS

Gate 2 source breakdown voltage

IG2S = 10 mA, VG1S = 0 V, VDS = 0 V

Gate 1 source leakage current

VG1S = 5 V, VG2S = VDS = 0

IG1SS

Gate 2 source leakage current

VG2S = 5 V, VG1S = 0 V, VDS = 0 V

IG2SS

µA

Drain current

VDS = 5 V, VG1S = 0 , VG2S = 4 V

IDSS

0.3

VG1S(p)

Gate 1-source pinch-off voltage

VDS = 5 V, VG2S = 4 V, ID = 200 µA

Gate 2-source pinch-off voltage

VDS = 5 V, ID = 100 µA

0.2

VG2S(p)

Semiconductor Group

1998-11-01

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