ICS9P935 datasheet(3/13 Pages) IDT

3 / 13 page

IDTTM/ICSTM

DDR I/DDR II Phase Lock Loop Zero Delay Buffer

ICS9P935

REV H

12/1/08

ICS9P935

DDR I/DDR II Phase Lock Loop Zero Delay Buffer

Absolute Max

Supply Voltage

-0.5V to 2.7V

Logic Inputs

GND –0.5 V to VDD +0.5 V

Ambient Operating Temperature

0°C to +70°C

Case Temperature

115°C

Storage Temperature

–65°C to +150°C

Stresses above those listed under

Absolute Maximum Ratings may cause permanent damage to the device. These ratings are

stress specifications only and functional operation of the device at these or any other conditions above those listed in the

operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods

may affect product reliability.

Electrical Characteristics - Input/Supply/Common Output Parameters

TA = 0 - 70°C; Supply Voltage AVDD, VDD = 1.8 V +/- 0.1V (unless otherwise stated)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Input High Current

IIH

VI = VDD or GND

±250

µA

Input Low Current

IIL

VI = VDD or GND

±10

µA

Output Disabled Low

Current

IODL

OE = L, VODL = 100mV

100

µA

IDD1.8

CL = 0pf @ 100MHz

300

IDDLD

CL = 0pf

500

µA

Input Clamp Voltage

VIK

VDDQ = 1.8V Iin = -18mA

-1.2

IOH = -100µA

VDD -0.2

IOH = -9mA

1.1

IOL=100µA

0.1

IOL=9mA

0.6

Input Capacitance

CIN

VI = GND or VDD

Output Capacitance

COUT

VOUT = GND or VDD

Operating Supply

Current

High-level output

voltage

VOH

Low-level output voltage

VOL

ICS9P935 データシート(PDF) 3 Page - Integrated Device Technology

ICS9P935 データシート(HTML) 3 Page - Integrated Device Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

データシートダウンロード