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5P4M データシート(PDF) 1 Page - Tiger Electronic Co.,Ltd |
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5P4M データシート(HTML) 1 Page - Tiger Electronic Co.,Ltd |
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1 / 1 page ![]() Parameter Symbol Typ Unit 5P4M 5P5M 5P6M Repetitive peak off-state voltages V DRM V RRM 400 500 600 V RMS on-state current I T(AV) 5.0 A Non-repetitive peak on-state current I TSM 80 A Max. Operating Junction Temperature T j 110 oC Storage Temperature T stg -45~150 oC 5P4M 5P5M 5P6M GENERAL DESCRIPTION Parameter Symbol Test Conditions Min Typ Max Unit Repetitive peak off-state voltages V DRM V RRM — 400 ~600 — V RMS on-state current I T(AV) full sine wave; T mb ≤103 oC — 5.0 — A On-state voltage V T I T=10A — — 1.4 V Holding current I H V D = 24 V; IGT = 0.1 A — 10 — mA Gate trigger current I GT V D = 6.0 V; RL = 100Ω — — 10 mA Gate trigger voltage V GT V D = 6.0 V; RL = 100Ω — — 1.5 V Triacs sensitive gate Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial domestic lighting, heating and staticand switching. Product specification ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS ( Ta = 25 C) O ( Ta = 25 C) O TO-220 TIGER ELECTRONIC CO.,LTD |
同様の部品番号 - 5P4M |
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同様の説明 - 5P4M |
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